APA:Junchen Deng, Hock Jin Quah. (Volume-35, Issue- -(Year-2023)). Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient. Retrieved from https://www.sciencedirect.com/science/article/pii/S2214993722001488
Chicago:Junchen Deng, Hock Jin Quah. "Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient" Example, Volume-35-issue--Year-2023-2214-9937. https://www.sciencedirect.com/science/article/pii/S2214993722001488.
