APA:Neha goel and manoj kr pandey. (Volume-9, Issue-1 -(Year-2017)). Design device for subthreshold slope in DG fully depleted SOI MOSFET, International Journal of nano and electronic physics. Retrieved from https://jnep.sumdu.edu.ua/en/component/content/full_article/2143
Chicago:Neha goel and manoj kr pandey. "Design device for subthreshold slope in DG fully depleted SOI MOSFET, International Journal of nano and electronic physics" Example, Volume-9-issue-1-Year-2017-2306-4277. https://jnep.sumdu.edu.ua/en/component/content/full_article/2143.
