Reviewer
| Name: | Dr Neha Goel |
| Designation: | Associate Professor |
| Department: | Electronic and Communication Engineering |
| Research Area: | VLSI, IOT |
| Organization: | Raj Kumar Goel Institute of technology, ghaziabad |
| Contact: | Contact Reviewer |
| Qualification: | PhD |
| Status: |
| Author: | Dr Neha Goel |
| Title: | Temperature effects on Threshold Voltage and Mobility for Partially Depleted SOI MOSFET |
| Publication Year: ISSN: Volume: Issue: |
2012 5844-8163 42 21 |
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| More Details | Click here |
| Author: | Neha goel and manoj kr pandey |
| Title: | Modeling of threshold voltage for short channel devices |
| Publication Year: ISSN: Volume: Issue: |
2019 978-1-7281-1379-1 |
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| More Details | Click here |
| Author: | Neha goel and manoj kr pandey |
| Title: | Design device for subthreshold slope in DG fully depleted SOI MOSFET, International Journal of nano and electronic physics |
| Publication Year: ISSN: Volume: Issue: |
2017 2306-4277 9 1 |
| Indexing: | SCOPUS, |
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| More Details | Click here |
| Author: | Neha goel and manoj kr pandey |
| Title: | Numerical simulation and mathematical modeling of 3D DG SOI MOSFET with the influence of biasing with back gate |
| Publication Year: ISSN: Volume: Issue: |
2017 2306-4277 9 5 |
| Visit Paper: | Click here |
| More Details | Click here |