An investigation of optical constants, solid state parameters and NLO properties of glycine sodium iodide (GSI): a new auspicious semi organic NLO crystal for optoelectronics applications
Author : B. Neelakantaprasad1 · G. Rajarajan2 · B. Ravi3 · S. Masilamani4 Views : 226
Abstract:
Optically very nice quality single crystals of a new semi organic NLO material, glycine sodium iodide (abbreviated as GSI) C2H5NO2·NaI had been grown by exploiting slow evaporation technique. The yielded crystals had been of average dimensions 22× 4× 5 mm3
. FTIR spectroscopy showed the vibration frequencies of numerous functional groups in the cultivated
crystal. Single and powder X-ray diffraction studies were executed to determine the crystal structure and lattice parameters of the synthesized compound. Optical constants such as band gap, refractive index, reflectance, extinction coefficient and electric susceptibility have been deliberated for the cultivated material from the UV–Vis–NIR spectrum. The optical band gap of the harvested crystal is perceived to be 5.09 eV. The chemical composition of GSI is analyzed by employing EDX analysis. The dielectric constant and dielectric loss of the synthesized material have been measured in different frequency range from 100 Hz to 5 MHz at three different temperatures (40, 50 and 60 °C). Moreover, solid state electronic properties, such as plasma energy, Penn gap energy, Fermi energy and electronic polarizability of the cultivated crystal have been calculated. Surface morphology of the harvested material is studied with the aid of scanning electron microscope. From
the second harmonic generation analysis, it is evident that GSI has the efficiency 1.53 times that of potassium dihydrogen phosphate and hence it is an exemplary material for optoelectronics applications.
. FTIR spectroscopy showed the vibration frequencies of numerous functional groups in the cultivated
crystal. Single and powder X-ray diffraction studies were executed to determine the crystal structure and lattice parameters of the synthesized compound. Optical constants such as band gap, refractive index, reflectance, extinction coefficient and electric susceptibility have been deliberated for the cultivated material from the UV–Vis–NIR spectrum. The optical band gap of the harvested crystal is perceived to be 5.09 eV. The chemical composition of GSI is analyzed by employing EDX analysis. The dielectric constant and dielectric loss of the synthesized material have been measured in different frequency range from 100 Hz to 5 MHz at three different temperatures (40, 50 and 60 °C). Moreover, solid state electronic properties, such as plasma energy, Penn gap energy, Fermi energy and electronic polarizability of the cultivated crystal have been calculated. Surface morphology of the harvested material is studied with the aid of scanning electron microscope. From
the second harmonic generation analysis, it is evident that GSI has the efficiency 1.53 times that of potassium dihydrogen phosphate and hence it is an exemplary material for optoelectronics applications.
